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High Temperature Electronics

The solution to providing ICs with high operating temperature capability and extremely high reliability for extraordinary value in high temperature applications is the use of Silicon On Sapphire (SOS) CMOS technology. The key attribute of SOS is the thin layer of Al2O3 that isolates the integrated circuit transistors from the bulk substrate. SOI technologies use a silicon–insulator–silicon substrate in place of bulk substrates. This kind of substrate allows to reduce the parasitic capacitances for each device and therefore provide improvements in performance. This feature has a number of benefits:

  • 225°C continuous and excursions to 300°C.
  • Reduced capacitance for faster and lower power circuits.
  • Greatly reduced noise with isolation from the bulk silicon for sensitive mixed signal circuits.


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